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(1) Irradiation distance is independent of the number of wafers.
Spot array infrared camera infrared lamps adopt special “wafer structureâ€, “crystal growth process†and “encapsulation technologyâ€, which are completely different from previous infrared lamp brightness standards. When the infrared camera was just born, in order to identify and monitor the distance 50 meters away, it would take 60 24-mil infrared lamps to achieve this. Due to the large size, high power consumption, and low heat dissipation, the lamp has a lifetime of less than one year. With the second-generation array-type infrared lamp, it is still 60 pieces of 24 MIL, and the volume is reduced several times, the heat dissipation capacity is effectively improved, and the life span is extended by 5 to 10 times. If we use the third-generation dot-matrix infrared light, we only need one 42mil to get it, with a smaller size, longer life, and an extended illumination recognition distance of 80 meters. The reason that a spot-array infrared lamp can illuminate such a long distance just because of an infrared lamp is mainly because of its extremely high photoelectric conversion efficiency. Because of this, the products assembled from this chip have extremely low heat and long life, which also improves the performance and life of the overall infrared camera.
(2) Light intensity is no longer based on power.
Infrared camera in a generation of LED infrared light, second-generation array of infrared light, people often use infrared chip points to distinguish between the strength of the infrared light, brightness and darkness. Since the conventional light-emitting chips have different sizes and powers, infrared lamps with large natural power have high brightness and a long irradiation distance. In addition, if you use this method to distinguish the quality of infrared lamps, you need the photoelectric conversion efficiency of infrared lamps. The photoelectric conversion efficiency is different, it is difficult to assess the quality of the infrared lamp simply based on the infrared lamp power parameters. After the introduction of the dot-matrix infrared lamp, this situation has been completely changed. People can completely disassociate themselves from the infrared lamp power evaluation method and distinguish the intensity, brightness and darkness of the infrared lamp through the optical output (mW).
People use the infrared camera infrared chip points to distinguish the intensity of the infrared light, light and dark. After that, due to the different sizes of the infrared camera infrared lamp chips and different power, the power of the infrared lamp is changed to distinguish the intensity of the infrared lamp, light and dark. However, the input power to distinguish between light and dark, infrared cameras must be infrared light chip "the same luminous efficiency as the subject. In the past, indeed the brand chip light emitting "glow efficiency" is slightly the same, so that the light and dark comparison method is not There is a controversy, but after the introduction of the company's new high-efficiency infrared camera infrared chip, people will only be able to distinguish the intensity of the infrared light with the optical output (mW), the dot matrix infrared light from the most upstream The special crystal growth method to the subsequent thermoelectric separation packaging technology makes our light emitting components significantly superior to conventional infrared light emitting LEDs, and also breaks through the “light efficiency†that we have identified for a long time, thereby reducing heat generation. In this way, the same In addition to low power consumption, the brightness of the heat sink is small because the heat is not so large, and the volume of the entire product can be made smaller. More importantly, due to the low temperature, it has other electronic components around it. The damage does not exist, making the entire infrared camera the essence of concentration.
Infrared camera dot matrix light features
Infrared camera spot array infrared lamps adopt special “wafer structureâ€, “crystal growth process†and “encapsulation technologyâ€, which are completely different from the previous infrared lamp brightness standards. Nowadays, only one 42 MIL is needed, the volume is smaller, the life is still 5-10 times that of the traditional LED, and the recognition distance can reach 80 meters. The bottom line is that the wafer's photoelectric conversion efficiency is extremely high, which is more than double that of conventional array infrared cameras. Because of this, the products assembled using this chip have extremely low heat and long life.